2SC2707 データシートの表示（PDF） - New Jersey Semiconductor
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2SC2707 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc= 1mA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage IC=10A;IB=1A
ICBO
Collector Cutoff Current
VCB= 180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc=1A;VCE=5V
hpE-2
DC Current Gain
lc= 5A ; VCE= 5V
fr
Current-Gain—Bandwidth Product
lc=0.5A; VCE=12V
2SC2707
MIN TYP. MAX UNIT
180
V
180
V
5
V
3.0
V
100 M A
100 M A
55
160
30
10
MHz
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