RHRU5040 データシートの表示（PDF） - Fairchild Semiconductor
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RHRU5040 Datasheet PDF : 5 Pages
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RHRU5040, RHRU5050, RHRU5060
Electrical Specifications TC = +25oC, Unless Otherwise Specified
SYMBOL
TEST
CONDITION
RHRU5040
MIN TYP MAX
RHRU5050
MIN TYP MAX
RHRU5060
MIN TYP MAX
UNITS
VF
IF = 50A, TC = +25oC
IF = 50A, TC = +150oC
IR
VR = 400V, TC = +25oC
VR = 500V, TC = +25oC
VR = 600V, TC = +25oC
IR
VR = 400V, TC = +150oC
VR = 500V, TC = +150oC
VR = 600V, TC = +150oC
-
-
2.1
-
-
2.1
-
-
2.1
V
-
-
1.7
-
-
1.7
-
-
1.7
V
-
-
500
-
-
-
-
-
-
µA
-
-
-
-
-
500
-
-
-
µA
-
-
-
-
-
-
-
-
500
µA
-
-
1.5
-
-
-
-
-
-
mA
-
-
-
-
-
1.5
-
-
-
mA
-
-
-
-
-
-
-
-
1.5
mA
tRR
IF = 1A, dIF/dt = 100A/µs
-
-
45
-
-
45
-
-
45
ns
IF = 50A, dIF/dt = 100A/µs
-
-
50
-
-
50
-
-
50
ns
tA
IF = 50A, dIF/dt = 100A/µs
-
25
-
-
25
-
-
25
-
ns
tB
IF = 50A, dIF/dt = 100A/µs
-
20
-
-
20
-
-
20
-
ns
QRR
IF = 50A, dIF/dt = 100A/µs
-
65
-
-
65
-
-
65
-
nC
CJ
RθJC
VR = 10V, IF = 0A
-
140
-
-
140
-
-
140
-
pF
-
-
1.0
-
-
1.0
-
-
1.0
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLSFI
V2 AMPLITUDE CONTROLS dFI/dt
L1 = SELF INDUCTANCE OF
R4 + LLOOP
R1
+V1
0
t2
t1
Q1
R2
0
-V2
t3
Q3
R3
+V3
Q2
t1 ≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1 ≤ tA(MIN)
R4
10
LLOOP
DUT
Q4
C1
R4
-V4
FIGURE 1. tRR TEST CIRCUIT
dIF
IF
dt
0
tRR
tA
tB
0.25 IRM
IRM
VR
VRM
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
©2002 Fairchild Semiconductor Corporation
RHRU5040, RHRU5050, RHRU5060 Rev. B
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