2SB1223 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
一致するリスト
2SB1223 Datasheet PDF : 2 Pages
| |||
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V.;BRiCEC Collector-Emitter Breakdown Voltage lc= -50mA; RBt= "'
V;BR)CBO Collector-Base Breakdown Voltage
lc= -5mA; IE= 0
VcE(sal) Collector-Emitter Saturation Voltage lc= -2A, IB= -4mA
Vassal) Base-Emitter Saturation Voltage
lc= -2A; IB= -4mA
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
Vea= -5V; lc= 0
HFE
DC Current Gain
lc= -2A; VCE= -2V
fr
Current-Gain—Bandwidth Product
lc= -2A; VCE= -5V
Switching Times
tern
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= -2A. |DI= -Ie2= -4mA,
Vcc=-20V; RL= 10D
2SB1223
WIN TYP. MAX I UNIT
j
-60
V
-70
V
-15
V
-20
V
-100
MA
-3.0
mA
2000
20
i
MHz
i—
05
Ms
14
Ms
1.2
Ms
Share Link: 