2SA562 データシートの表示（PDF） - Inchange Semiconductor

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2SA562

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SA562

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=-100μA, IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0

V(BR)EBO Emitter-base breakdown voltage

IE= -100μA, IC=0

VCE(sat) Collector-Emitter Saturation Voltage IC=-100mA; IB= -10mA

VBE(on) base-emitter voltage

IC= -100mA;VCE= -1V

ICBO

collector cut-off current

VCB =-35 V,IE = 0

IEBO

Emitter Cutoff Current

VEB=-5V; IC=0

hFE-1

DC Current Gain

IC= -0.1A ; VCE=- 1V

hFE-2

DC Current Gain

IC=-0.4A ; VCE= -6V

MIN MAX UNIT

-35

V

-30

V

-5

V

-0.25 V

-1.0

V

-0.1 uA

-0.1 uA

70 240

25

Classification of hFE1

Rank

hFE-1

hFE-2

O

70-140

25min

Y

120-240

40min

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