D1110 データシートの表示（PDF） - Inchange Semiconductor

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D1110

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1110

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min)

·Good Linearity of hFE

·Complement to Type 2SB849

APPLICATIONS

·Designed for audio frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

ICP

Collector Current-Pulse

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

120

V

5

V

7

A

12

A

80

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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