CM600HU-12H(1998) データシートの表示（PDF） - MITSUBISHI ELECTRIC

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CM600HU-12H
(Rev.:1998)

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM600HU-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (Tc = 25°C)

Peak Collector Current (Tj ≤ 150°C)

Emitter Current** (Tc = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (Tc = 25°C)

Mounting Torque, M8 Main Terminal

Symbol

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

CM600HU-12H

-40 to 150

-40 to 125

600

±20

600

1200*

600

1200*

1560

8.8~10.8

Mounting Torque, M6 Mounting

Mounting Torque, M4 Terminal

–

3.5~4.5

–

1.3~1.7

Weight

–

450

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

2500

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

–

–

Gate Leakage Voltage

IGES

VGE = VGES, VCE = 0V

–

–

Gate-Emitter Threshold Voltage

VGE(th)

IC = 60mA, VCE = 10V

4.5

6

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 600A, VGE = 15V, Tj = 25°C

–

2.4

IC = 600A, VGE = 15V, Tj = 125°C

–

2.6

Total Gate Charge

QG

VCC = 300V, IC = 600A, VGE = 15V

–

1200

Emitter-Collector Voltage*

VEC

IE = 600A, VGE = 0V

–

–

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Input Capacitance

Cies

–

–

Output Capacitance

Coes

VCE = 10V, VGE = 0V

–

–

Reverse Transfer Capacitance

Cres

–

–

Resistive

Load

Switch

Turn-on Delay Time

Rise Time

Turn-off Delay Time

td(on)

tr

td(off)

VCC = 300V, IC = 600A,

VGE1 = VGE2 = 15V,

RG = 1.0Ω, Resistive

–

–

–

–

–

–

Times

Fall Time

Diode Reverse Recovery Time

tf

Load Switching Operation

–

–

trr

IE = 600A, diE/dt = -1200A/µs

–

–

Diode Reverse Recovery Charge

Qrr

IE = 600A, diE/dt = -1200A/µs

–

1.44

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Rth(j-c)Q

Per IGBT Module

–

Thermal Resistance, Junction to Case

Rth(j-c)D

Per FWDi Module

–

Contact Thermal Resistance

Rth(c-f)

Per Module, Thermal Grease Applied

–

Typ.

–

–

0.02

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

N·m

Grams

Vrms

Max.

1

0.5

7.5

3.0

–

–

2.6

Units

mA

µA

Volts

Volts

Volts

nC

Volts

Max.

52.8

28.8

7.8

300

600

350

300

160

–

Units

nF

nF

nF

ns

ns

ns

ns

ns

µC

Max.

0.08

0.12

–

Units

°C/ W

°C/W

°C/W

Sep.1998

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