BC857AT データシートの表示（PDF） - Infineon Technologies
部品番号
コンポーネント説明
一致するリスト
BC857AT Datasheet PDF : 6 Pages
| |||
BC857T
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO 45
-
-V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 50
-
-
IC = 10 µA, IE = 0
Collector-emitter breakdown voltage
V(BR)CES 50
-
-
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
V(BR)EBO 5
-
-
IE = 1 µA, IC = 0
Collector cutoff current
ICBO
-
-
15 nA
VCB = 30 V, IE = 0
Collector cutoff current
ICBO
-
-
5 µA
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain
hFE
-
IC = 10 µA, VCE = 5 V
BC857AT
- 140 -
BC857BT
- 250 -
DC current gain
IC = 2 mA, VCE = 5 V
hFE
BC857AT
BC857BT
125 180 250
220 290 475
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VCEsat
mV
-
75 300
- 250 650
VBEsat
- 700 -
- 850 -
VBE(ON)
600 650 750
-
- 820
1) Pulse test: t < 300s; D < 2%
2
Nov-29-2001
Share Link: 