SI3850ADV データシートの表示（PDF） - Vishay Semiconductors
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SI3850ADV Datasheet PDF : 2 Pages
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Specification Comparison
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Si3850ADV
Si3850DV
Unit
Min
Typ
Max
Min
Typ
Max
Static
Gate-Threshold Voltage
VGS(th)
N-Ch
P-Ch
0.6
- 0.6
1.5
- 1.5
0.6
- 0.6
1.5
V
- 1.5
Gate-Body Leakage
IGSS
N-Ch
P-Ch
± 100
± 100
± 100
nA
± 100
Zero Gate Voltage Drain Current
IDSS
N-Ch
1
P-Ch
-1
1
µA
-1
On-State Drain Current
VGS = 4.5 V
VGS = - 4.5 V
ID(on)
N-Ch
P-Ch
3.0
- 1.5
3.0
- 2.0
A
VGS = 4.5 V
N-Ch
0.240 0.300
0.38
0.500
Drain-Source
On-Resistance
VGS = - 4.5 V
VGS = 3.0 V
rDS(on)
P-Ch
N-Ch
0.510
0.325
0.640
0.410
0.7
1.0
Ω
0.55
0.750
VGS = - 3.0 V
P-Ch
0.780 0.980
1.1
1.3
Forward Transconductance
gfs
N-Ch
1.8
P-Ch
1.1
2.7
S
1.2
Diode Forward Voltage
VSD
N-Ch
P-Ch
0.87
- 1.0
1.2
- 1.3
1.2
V
- 1.2
Dynamic
Total Gate Charge
Qg
N-Ch
P-Ch
0.95
1.4
1.10
1.7
0.8
2.0
1.10
2.5
Gate-Source Charge
Qgs
N-Ch
P-Ch
0.22
0.28
0.25
nC
0.5
Gate-Drain Charge
Qgd
N-Ch
0.24
0.2
P-Ch
0.26
0.2
Gate Resistance
Rg
N-Ch
P-Ch
3.5
5.3
0.3
10.5
16
3
1.5
Ω
16
Switchinga
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
8
14
13
20
16
25
34
50
20
30
18
30
9
15
18
30
20
30
25
40
10
20
8
15
20
40
20
40
20
40
ns
10
20
16
30
8
15
40
80
40
80
Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any
guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits.
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Document Number: 73853
Revision: 31-Oct-06
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