6MBI75S-120 データシートの表示（PDF） - Fuji Electric
部品番号
コンポーネント説明
一致するリスト
6MBI75S-120 Datasheet PDF : 4 Pages
| |||
6MBI75S-120
Characteristics
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
200
VGE= 20V 15V 12V
150
100
10V
50
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
200
Tj= 25oC
Tj= 125oC
150
100
50
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
20000
10000
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Cies
1000
Coes
Cres
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
IGBT Modules
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
200
VGE= 20V 15V 12V
150
10V
100
50
0
0
8V
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
Ic= 150A
Ic= 75A
2
Ic= 37.5A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj= 25 oC
25
800
20
600
15
400
10
200
5
0
0
0
200
400
600
800
Gate charge : Qg [ nC ]
Share Link: 