datasheetbank_Logo
データシート検索エンジンとフリーデータシート

C4764 データシートの表示(PDF) - New Jersey Semiconductor

部品番号
コンポーネント説明
一致するリスト
C4764
NJSEMI
New Jersey Semiconductor NJSEMI
C4764 Datasheet PDF : 2 Pages
1 2
, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4764
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
• Low Saturation Voltage
• Built-in Damper Diode
APPLICATIONS
• Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
600
V
*
i .v
123
2
oT
I W. If I
1C^U
3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3P(H)IS package
-
t'o
!uf
!t
A
-B — -P. <c«-
-*. s ••-
>
F
f
!«r* ft - .
ii
L- ^
K
I
»
z*
N>
«•»
G
VEBO Emitter-Base Voltage
5
V
*
*• •• J
- o *• R " -*• N™»
Ic
Collector Current- Continuous
±6
A
ICP
Collector Current-Pulse
±12
A
Is
Base Current- Continuous
Collector Power Dissipation
PC
@ TG=25°C
Tj
Junction Temperature
3
A
50
W
150
°C
Tstg
Storage Temperature Range
-55-150 •c
mm
DIM MEN MAX
A 24.30 24.70
B 15,20 15.80
C 5.20 5,80
D 0.65 0.85
F 3.30 3.90
G 3.90 4.10
H 4,30 4.70
J 0.80 1.00
K 18.30 18,70
L 1.90 2.10
N 10.70 11.10
Q 4.40 4.60
R 3.30 3.70
S 3,20 3.40
u 9,50 9,70
Y 1.90 2,10
2 1.40JL 1.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I lowever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verily that datasheets are current before placing orders.
Quality Semi-Conductors

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]