IRF7805PBF-1 データシートの表示（PDF） - Infineon Technologies
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IRF7805PBF-1 Datasheet PDF : 6 Pages
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IRF7805TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30 ––– ––– V VGS = 0V, ID = 250µA
––– 9.2 11 mVGS = 4.5V, ID = 7.0A
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 70
VDS = 30V, VGS = 0V
––– ––– 10 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V,VGS = 0V,TJ = 100°C
–––
–––
––– 100
––– -100
nA
VGS = 12V
VGS = -12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs1
Pre -Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Diode Characteristics
––– 22 31
––– 3.7 –––
VGS = 5.0V
––– 1.4 ––– nC VDS = 16V
––– 6.8 –––
ID = 7.0A
––– 8.2 11.5
––– 30 36 nC VDS = 16V, VGS = 0V
0.5 ––– 1.7
––– 16 –––
VDD = 16V,VGS = 4.5V
–––
–––
20
38
–––
–––
ns
ID = 7.0A
RG = 2
––– 16 –––
Resistive Load
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
Min.
–––
–––
–––
Typ.
–––
–––
–––
Max. Units
Conditions
2.5
106
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.2 V TJ = 25°C,IS = 7.0A,VGS = 0V
Qrr
Reverse Recovery Charge
Qrr
Reverse Recovery Charge
–––
88
–––
di/dt = 700A/µs
nC VDS =16V, VGS= 0V, IS= 7.0A
––– 55 –––
di/dt = 700A/µs (with 10BQ040)
VDS =16V, VGS= 0V, IS= 7.0A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" in square copper board, t < 10 sec.
Typ = measured - QOSS
R is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
2
2016-08-23
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