D669 データシートの表示（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

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D669

Silicon NPN transistor in a TO-126 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SD669(A)

Rev.F Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

2SD669

2SD669A

VEBO

IC

ICP

PC

PC(Tc=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

180

120

160

5.0

1.5

3.0

1.0

20

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base

Breakdown Voltage

Collector to Emitter

Breakdown Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

DC Current Gain

Base to Emitter Voltage

Collector to Emitter

Saturation Voltage

Transition Frequency

Collector Output

Capacitance

符号

Symbol

VCBO

测试条件

Test Conditions

IC=1.0mA IE=0

2SB649

VCEO

IC=10mA

2SB649A

RBE=∞

VEBO

ICBO

hFE(1)

hFE(2)

VBE

VCE(sat)

fT

Cob

IE=1.0mA

VCB=160V

VCE=5.0V

VCE=5.0V

VCE=5.0V

IC=500mA

VCE=5.0V

VCB=10V

f=1.0MHz

IC=0

IE=0

IC=150mA

IC=500mA

IC=150mA

IB=50mA

IC=150mA

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

180

V

120

V

160

5.0

V

10 μA

60

320

30

1.5 V

1.0 V

140

MHz

14

pF

http://www.fsbrec.com

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