FSA2567MPX データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

一致するリスト

FSA2567MPX

Low-Power, Dual SIM Card Analog Switch

ON Semiconductor 

DC Electrical Characteristics

All typical values are at 25°C, 3.3 V VCC unless otherw ise specified.

Symbol Parameter

Conditions

TA=- 40ºC to +85ºC

VCC (V)

Units

Min. Typ. Max.

VIK Clamp Diode Voltage IIN = -18 mA

2.7

1.65 to 2.3 1.1

-1.2

V

VIH Input Voltage High

2.7 to 3.6 1.3

V

4.3

1.7

1.65 to 2.3

0.4

VIL Input Voltage Low

2.7 to 3.6

4.3

0.5

V

0.7

IIN

Control Input Leakage VSW = 0 to VCC

4.3

-1

nRST, nDAT, nCLK, nVSIM = 0.3 V

Inc(off), Ino(off), Of f State Leakage

or 3.6 V

4.3

-60

Figure 10

1

µA

60

nA

ROND

Data Path Sw itch On

Resistance(3)

VSW = 0, 1.8 V, ION = -20 mA

Figure 9

VSW = 0, 2.3 V, ION = -20 mA

Figure 9

1.8

2.7

7.0 12.0

Ω

6.0 10.0

RONV

VSIM Sw itch

On Resistance(3)

VSW = 0, 1.8V, ION = -100mA

Figure 9

VSW = 0, 2.3 V, ION = -100 mA

Figure 9

1.8

2.7

0.5 0.7

Ω

0.4 0.6

∆ROND

Data Path Delta

On Resistance(4)

VSW = 0 V, ION = -20 mA

2.7

0.2

Ω

ICC

Quiescent Supply

Current

VCNTRL = 0 or VCC, IOUT = 0

4.3

1.0

µA

Increase in ICC Current VCNTRL = 2.6 V, VCC = 4.3 V

4.3

ICCT Per Control Voltage

and VCC

VCNTRL = 1.8 V, VCC = 4.3 V

4.3

5.0 10.0 µA

7.0 15.0 µA

Note s :

3. Measured by the voltage drop betw een nDAT, nRST, nCLK and relative common port pins at the indicated current

through the sw itch. On resistance is determined by the low er of the voltage on the relative ports.

4. Guaranteed by characterization.

www.onsemi.com

4

Share Link: