BAL99W-T1 データシートの表示（PDF） - Won-Top Electronics
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BAL99W-T1 Datasheet PDF : 4 Pages
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BAL99W
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
@ IR = 100µA
Forward Voltage Drop
Peak Reverse Leakage Current
@ IF = 1.0mA
@ IF = 10mA
@ IF = 50mA
@ IF = 150mA
@ VR = 75V, TJ = 25°C
@ VR = 25V, TJ = 150°C
@ VR = 75V, TJ = 150°C
Diode Capacitance (VR = 0V, f = 1.0MHz)
Reverse Recovery Time (IF = IR = 10mA, IRR = 0.1 x IR, RL = 100Ω)
250
Symbol
V(BR)
VFM
IRM
CD
trr
100
Min.
75
®
WON-TOP ELECTRONICS
Typ.
Max.
Unit
V
0.715
0.855
1.0
V
1.25
2.5
30
µA
50
1.5
pF
6.0
nS
200
10
150
TA = 150°C
TA = 85°C
100
TA = 25°C
1.0
50
TA = -40°C
0
0 15 30 45 60 75 90 105 120 135 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
2.0
1.8
1.6
f = 1.0MHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
VR, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
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2
0.1
0
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10000 TA = 150°C
1000
TA = 125°C
100
TA = 75°C
10
TA = 25°C
TA = 0°C
1.0
TA = -40°C
0.1
0
20
40
60
80
100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
© Won-Top Electronics Co., Ltd.
Revision: April, 2012
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