TCET2100(1999) データシートの表示（PDF） - Vishay Semiconductors

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TCET2100
(Rev.:1999)

Optocoupler with Phototransistor Output

Vishay Semiconductors 

TCET110.(G) up to TCET4100

Vishay Telefunken

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter

Forward voltage

Junction capacitance

Test Conditions

IF = ± 50 mA

VR = 0 V, f = 1 MHz

Symbol Min.

Typ.

Max.

Unit

VF

1.25

1.6

V

Cj

50

pF

Output (Detector)

Parameter

Collector emitter voltage

Emitter collector voltage

Collector emitter cut-off

current

Test Conditions

IC = 1 mA

IE = 100 mA

VCE = 20 V, If = 0, E = 0

Symbol Min.

Typ.

Max.

Unit

VCEO

70

VECO

7

ICEO

V

V

10

100

nA

Coupler

Parameter

Collector emitter

saturation voltage

Cut-off frequency

Coupling capacitance

Test Conditions

IF = 10 mA, IC = 1 mA

W VCE = 5 V, IF = 10 mA,

RL = 100

f = 1 MHz

Symbol Min.

Typ.

Max.

Unit

VCEsat

0.3

V

fc

110

kHz

Ck

0.3

pF

Current Transfer Ratio (CTR)

Parameter

Test Conditions

IC/IF

VCE = 5 V, IF = 5 mA

IC/IF

VCE = 5 V, IF = 10 mA

IC/IF

VCE = 5 V, IF = 1 mA

IC/IF

VCE = 5 V, IF = 5 mA

Type

Symbol Min. Typ. Max. Unit

TCET1100(G)/ CTR 0.50

6.0

TCET2100/

TCET4100

TCET1101(G) CTR 0.40

0.8

TCET1102(G) CTR 0.63

1.25

TCET1103(G) CTR

1.0

2.0

TCET1104(G) CTR

1.6

3.2

TCET1101(G) CTR 0.13 0.30

TCET1102(G) CTR 0.22 0.45

TCET1103(G) CTR 0.34 0.70

TCET1104(G) CTR 0.56 0.90

TCET1105(G) CTR

0.5

1.5

TCET1106(G) CTR

1.0

3.0

TCET1107(G) CTR

0.8

1.6

TCET1108(G) CTR

1.3

2.6

TCET1109(G) CTR

2.0

4.0

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4 (11)

Document Number 83503

Rev. A6, 08–Sep–99

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