Q68000-A8397 データシートの表示（PDF） - Infineon Technologies
部品番号
コンポーネント説明
一致するリスト
Q68000-A8397 Datasheet PDF : 7 Pages
| |||
PNP Silicon Switching Transistor
q High current gain: 0.1 mA to 100 mA
q Low collector-emitter saturation voltage
SXT 3906
Type
SXT 3906
Marking
2A
Ordering Code
(tape and reel)
Q68000-A8397
Pin Configuration
1
2
3
B
C
E
Package1)
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation, TS = 100 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VCE0
VCB0
VEB0
IC
Ptot
Tj
Tstg
Values
Unit
40
V
40
5
200
mA
1
W
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 120
K/W
≤ 50
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
Share Link: 