BTS112A データシートの表示（PDF） - Infineon Technologies

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BTS112A

TEMPFET®

Infineon Technologies 

TEMPFET® BTS 112 A

Features

q N channel

q Enhancement mode

q Temperature sensor with thyristor characteristic

q The drain pin is electricalIy shorted to the tab

1 23

Pin

1

2

3

G

D

S

Type

BTS 112A

VDS

60 V

ID

12 A

RDS(on)

0.15 Ω

Package

TO-220AB

Ordering Code

C67078-S5014-A3

Maximum Ratings

Parameter

Drain-source voltage

Drain-gate voltage, RGS = 20 kΩ

Gate-source voltage

Continuous drain current, TC = 33 °C

ISO drain current

TC = 85 °C, VGS = 10 V, VDS = 0.5 V

Pulsed drain current, TC = 25 °C

Short circuit current, Tj = – 55 ... + 150 °C

Short circuit dissipation, Tj = – 55 ... + 150 °C

Power dissipation

Operating and storage temperature range

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Thermal resistance

Chip-case

Chip-ambient

Symbol

VDS

VDGR

VGS

ID

ID-ISO

ID puls

ISC

PSCmax

Ptot

Tj, Tstg

–

–

Rth JC

Rth JA

Values

60

60

± 20

12

2.5

48

27

400

40

– 55 ... + 150

E

55/150/56

≤ 3.1

≤ 75

Unit

V

A

W

°C

–

K/W

1

19.02.04

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