DFM1200FXM18-A000(2001) データシートの表示（PDF） - Dynex Semiconductor

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DFM1200FXM18-A000
(Rev.:2001)

Fast Recovery Diode Module

Dynex Semiconductor 

DFM1200FXM18-A000

STATIC ELECTRICAL CHARACTERISTICS - PER ARM

Tvj = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

IRM

Peak reverse current

V

Forward voltage

F

L

Inductance

VR = 1800V, Tvj = 125˚C

IF = 1200A

IF = 1200A, Tvj = 125˚C

-

STATIC ELECTRICAL CHARACTERISTICS

Tvj = 25˚C unless stated otherwise.

Symbol

Parameter

L

Module inductance

M

(externally connected in parallel)

Test Conditions

-

DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM

Tvj = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

Irr

Peak reverse recovery current

Qrr

Reverse recovery charge

E

Reverse recovery energy

rec

IF = 1200A,

dIF/dt = 8000A/µs,

V = 900V

R

Tvj = 125˚C unless stated otherwise.

Symbol

Parameter

Irr

Peak reverse recovery current

Qrr

Reverse recovery charge

E

Reverse recovery energy

rec

Test Conditions

I = 1200A,

F

dIF/dt = 8000A/µs,

VR = 900V

Min. Typ. Max. Units

-

-

20 mA

-

2.0

2.3

V

-

2.0

2.3

V

-

20

-

nH

Min.

-

Typ.

15

Max. Units

-

nH

Min.

-

-

-

Typ.

880

320

240

Max. Units

-

A

-

µC

-

mJ

Min. Typ. Max. Units

-

1020

-

A

-

540

-

µC

-

360

-

mJ

3/7

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