KSC5402D(2002) データシートの表示（PDF） - Fairchild Semiconductor
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KSC5402D Datasheet PDF : 10 Pages
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KSC5402D/KSC5402DT
High Voltage High Speed Power Switch
Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices; D-PAK or TO-220
Equivalent Circuit
C
B
D-PAK
1
TO-220
E
1
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(TC=25°C) : D-PAK *
: TO-220
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Value
1000
450
12
2
5
1
2
30
50
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja
Junction to Ambient
TL
Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds
* Mounted on 1” square PCB (FR4 ro G-10 Material)
Rating
TO-220
D-PAK
2.5
4.17 *
62.5
50
270
270
Unit
°C/W
°C
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
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