30BQ100 データシートの表示（PDF） - Sangdest Microelectronic (Nanjing) Co., Ltd
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30BQ100 Datasheet PDF : 5 Pages
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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0676, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current *
Max. Junction Capacitance
Typical Series Inductance
Max. Voltage Rate of
Change
* Pulse Width < 300µs, Duty Cycle < 2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 3 A, Pulse, TJ = 25 °C
@ 6 A, Pulse, TJ = 25 °C
@ 3 A, Pulse, TJ = 125 °C
@ 6 A, Pulse, TJ = 125°C
@VR = Rated VR, Pulse,
TJ = 25 °C
@VR = Rated VR, Pulse,
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
30BQ100
Green Products
Max.
0.79
0.90
0.62
0.70
0.5
5
115
3.0
10,000
Units
V
V
mA
mA
PF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Lead
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJL
RθJA
wt
Condition
-
-
DC operation
DC operation
-
SMC
Specification
-55 to +175
-55 to +175
12
Units
°C
°C
°C/W
46
°C/W
0.65
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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