SFH9240 データシートの表示（PDF） - Fairchild Semiconductor
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SFH9240 Datasheet PDF : 7 Pages
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SFH9240
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
-200 -- -- V
-- -0.16 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.5 Ω
-- 6.5 -- S
-- 1220 1585
-- 207 310 pF
-- 81 120
-- 16 40
-- 23 55
ns
-- 54 115
-- 19 50
-- 46 59
-- 9.2 -- nC
-- 22.9 --
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-200V
VDS=-160V,TC=125oC
VGS=-10V,ID=-5.5A O4
VDS=-40V,ID=-5.5A O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-100V,ID=-11A,
RG=9.1Ω
See Fig 13
O4 O5
VDS=-160V,VGS=-10V,
ID=-11A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -11
Integral reverse pn-diode
A
-- -44
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-11A,VGS=0V
-- 180 -- ns TJ=25oC,IF=-11A
-- 1.24 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=10mH, IAS=-11A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O <_ <_ <_ 3 ISD -11A, di/dt 450A/µs, VDD BVDSS , Starting TJ =25oC
O <_ 4 Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O5 Essentially Independent of Operating Temperature
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