2SA1576A データシートの表示（PDF） - Galaxy Semi-Conductor

部品番号

コンポーネント説明

一致するリスト

2SA1576A

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

2SA1576A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0

-60

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-1mA,IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO IE=-50μA,IC=0

-6

Collector cut-off current

ICBO

VCB=-60V,IE=0

Emitter cut-off current

IEBO

VEB=-6V,IC=0

DC current gain

hFE

VCE=-6V,IC=-1mA

120

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

IC=-50mA, IB=-5mA

VCE=-12V, IC= -2mA

140

f=30MHz

VCB=-12V,IE=0,f=1MHz

4

V

V

V

-0.1 μA

-0.1 μA

560

-0.5 V

MHz

5

pF

CLASSIFICANTION OF hFE

Rank

Q

R

S

Range

120-270

180-390

270-560

marking

FQ

FR

FS

F029

Rev.A

www.gmicroelec.com

2

Share Link: