FGH40N60SMDF データシートの表示（PDF） - Fairchild Semiconductor

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FGH40N60SMDF

600 V, 40 A Field Stop IGBT

Fairchild Semiconductor 

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 20A

TC = 25oC

TC = 150oC

trr

Qrr

Diode Reverse Recovery Time

IES =20A, dIES/dt = 200A/s

Diode Reverse Recovery Charge

TC = 25oC

TC = 150oC

TC = 25oC

TC = 150oC

Min.

-

-

-

-

-

-

Typ.

1.3

1.2

70

126

207

638

Max

1.7

Unit

V

90

ns

290

nC

©2010 Fairchild Semiconductor Corporation

3

FGH40N60SMDF Rev. C0

www.fairchildsemi.com

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