MMBT5550 データシートの表示（PDF） - Yea Shin Technology Co., Ltd

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MMBT5550

High Voltage Transistors

Yea Shin Technology Co., Ltd 

ELECTRICAL CHARACTERISTICS

MMBT5551

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

ON CHARACTERISTICS

DC Current Gain

(I C = 1.0 mAdc, V CE = 5.0 Vdc)

(I C = 10 mAdc, V CE = 5.0 Vdc)

(I C = 50 mAdc, V CE = 5.0Vdc)

Collector–Emitter Saturation Voltage

(I C = 10 mAdc, I B = 1.0 mAdc)

MMBT5550

MMBT5551

MMBT5550

MMBT5551

MMBT5550

MMBT5551

Both Types

h

FE

60

80

60

80

20

30

VCE(sat)

—

(I C = 50 mAdc, I B = 5.0 mAdc )

Base–Emitter Saturation Voltage

(I C = 10 mAdc, I B = 1.0 mAdc)

MMBT5550

MMBT5551

Both Types

—

—

V BE(sat)

—

(I C = 50 mAdc, I B = 5.0 mAdc)

MMBT5550

—

MMBT5551

—

Max Unit

––

—

—

250

250

—

—

Vdc

0.15

0.25

0.20

Vdc

1.0

1.2

1.0

http://www.yeashin.com

2

REV.02 20120703

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