TGA1135B データシートの表示（PDF） - TriQuint Semiconductor
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TGA1135B Datasheet PDF : 8 Pages
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Advance Product Information
Feb 4, 2000
TGA1135B
TGA1135B built-in power detector
Vdet
100pF
Vbias
100pF
RF
IN
TGA1135B with external test coupler
(amplifier bias connections not shown)
RF
OUT
On-chip diode functions as envelope detector
External coupler and DC bias required
EG1135B measured detector voltage offset vs output power with
20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated,
10
10KΩ load
1
10KΩ
Video out
(Vdet)
0.1
0.01
8
10 12 14 16 18 20 22 24 26 28 30 32
Pout (dBm)
EG1135B
C=2pF
External
DC bias
50Ω
RF
OUT
External coupler
(-20dB)
RF
OUT
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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