MMBT4126 データシートの表示（PDF） - Fairchild Semiconductor
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MMBT4126 Datasheet PDF : 6 Pages
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2N4126
MMBT4126
C
C
BE
TO-92
SOT-23
Mark: ZF
E
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch-
ing applications at collector currents to 10 µA as a switch and to
100 mA as an amplifier.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
25
25
4.0
200
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N4126
625
5.0
83.3
200
*MMBT4126
350
2.8
357
Units
V
V
V
mA
°C
Units
mW
mW /°C
°C/W
°C/W
2001 Fairchild Semiconductor Corporation
2N4126/MMBT4126, Rev A
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