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BA 597
Characteristics per Diode
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Reverse current
IR
VR = 30 V
Forward voltage
VF
IF = 100 mA
Diode capacitance
CT
VR = 10 V, f = 1 MHz
VR = 0 V, f = 100 MHz
Forward resistance
rf
IF = 1.5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Charge carrier lifetime
τL
IF = 10 mA, IR = 6 mA, IR = 3 mA
min.
–
–
–
–
–
–
–
Value
Unit
typ.
max.
nA
–
20
V
0.9
–
pF
0.52
–
0.27
–
Ω
22
–
4.2
–
µs
2.5
–
Semiconductor Group
2