DF5A6.8F データシートの表示（PDF） - Toshiba

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DF5A6.8F

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

Toshiba 

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF5A6.8F

Diodes for Protecting against ESD

DF5A6.8F

Unit: mm

• The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

• The zener voltage corresponds to the E24 Series.

Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Junction temperature

Storage temperature range

Symbol

P

Tj

Tstg

Rating

Unit

200

MW

125

°C

−55~125

°C

Electrical Characteristics (Ta = 25°C)

JEDEC

―

JEITA

―

TOSHIBA

1-3H1A

Weight: 0.014 g (typ.)

Characteristic

Symbol

Test Condition

Min Typ. Max Unit

Zener voltage

Dynamic impedance

Knee dynamic impedance

Reverse current

Terminal capacitance

(between Cathode and Anode)

VZ

IZ = 5 mA

ZZ

IZ = 5 mA

ZZK

IZ = 0.5 mA

IR

VR = 5 V

CT

VR = 0, f = 1 MHz

6.4 6.8 7.2

V

―

10

25

Ω

―

30

―

Ω

―

―

0.5 µA

―

45

―

pF

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

Criterion: No damage to device elements

± 30kV

Marking

Equivalent Circuit (Top View)

1

2004-11-08

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