DF5A6.8LF データシートの表示（PDF） - Toshiba

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DF5A6.8LF

TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type

Toshiba 

DF5A6.8LF

TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type

DF5A6.8LF

Diodes for Protecting Against ESD

Unit: mm

· Because four devices are mounted on an ultra compact package, it is

possible to allow reducing the number of the parts and the mounting

cost.

· Zener voltage correspond to E24 Series.

· Low total capacitance: CT = 6.0 pF (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Power dissipation

Junction temperature

Storage temperature range

Symbol

P

Tj

Tstg

Rating

Unit

200

mW

125

°C

-55 to 125

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Zener voltage

Dynamic impedance

Knee dynamic impedance

Reverse current

Total capacitance

Symbol

VZ

ZZ

ZZK

IR

CT

Test Condition

IZ = 5 mA

IZ = 5 mA

IZ = 0.5 mA

VR = 5 V

VR = 0 V, f = 1 MHz

JEDEC

JEITA

TOSHIBA

―

―

1-3H1A

Min Typ. Max Unit

6.5

6.8

7.1

V

¾

¾

50

W

¾

¾

100

W

¾

¾

0.5

mA

¾

6.0

¾

pF

Guaranteed Level of ESD Immunity

Marking

Equivalent Circuit

(top view)

Test Condition

ESD Immunity Level

CU

IEC61000-4-2

(contact discharge)

±8 kV

1

2002-01-16

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