DF5A6.8JE データシートの表示（PDF） - Toshiba
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DF5A6.8JE Datasheet PDF : 3 Pages
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DF5A6.8JE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.8JE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
Tj
Tstg
Rating
Unit
100
mW
150
°C
−55~150
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
JEITA
TOSHIBA
⎯
1−2W1A
maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.003 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 5 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
―
―
25
Ω
―
―
0.5
μA
―
45
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30 kV
Criterion: No damage to device elements
1
2007-11-01
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