B1412 データシートの表示（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

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B1412

Silicon PNP transistor in a TO-252 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1412

Rev.E May.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current – Continuous

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICM

PC

*PC(Tc=25℃)

Tj

Tstg

*mounted On40×40×0.7mm ceramic board.

*贴装于 40×40×0.7mm 的陶瓷板上。



电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

-30

-20

-6.0

-5

-10

1.0

10

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-50μA IE=0

VCEO IC=-1.0mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=-50μA IC=0

Collector Cut-Off Current

ICBO VCB=-20V IE=0

Emitter Cut-Off Current

IEBO VEB=-5.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage*

Transition Frequency

Collector output capacitance

hFE VCE=-2.0V

*VCE(sat) IC=-4.0A

fT

VCE=-6.0V

f=30MHz

Cob

VCB=-20V

f=1.0MHz

IC=-0.5A

IB=-0.1A

IC=-50mA

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-30

V

-20

V

-6.0

V

-0.5 μA

-0.5 μA

82

390

-1.0 V

120

MHz

60

pF

*:measured using pulse current.

*:脉冲测试

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