MMBTA92 データシートの表示（PDF） - Galaxy Semi-Conductor

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MMBTA92

PNP High Voltage Amplifier

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

PNP High Voltage Amplifier

MMBTA92

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

Parameter

Collector-base breakdown voltage

Test conditions

IC=-100μA,IE=0

Collector-emitter breakdown voltage IC=-1mA,IB=B 0

Emitter-base breakdown voltage

IE=-100μA,IC=0

collector cut-off current

IE = 0; VCB = -200V

emitter cut-off current

IC = 0; VEB = -3V

DC current gain

VCE = -10V; IC= -1mA

VCE = -10V;IC= -10mA

VCE = -10V;IC= -50 mA

MIN. MAX. UNIT

-300

-300

-5

-

-

-0.1 μA

-0.1 μA

25

40

25

VCE(sat)

collector-emitter saturation voltage IC = -20mA; IBB = -2mA

-

-0.5 V

VBE(sat)

base-emitter saturation voltage

IC = -20mA; IBB = -2mA

-

-0.9 V

Cob

Collector output capacitance

VCB=-20V,f=1.0MHz

6.0

fT

transition frequency

IC = -10mA; VCE = -20V;

50

f = 100MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

pF

- MHz

Document number: BL/SSSTC077

Rev.A

www.galaxycn.com

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