STP80NE03L-06_98 データシートの表示（PDF） - STMicroelectronics
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STP80NE03L-06_98 Datasheet PDF : 8 Pages
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STP80NE03L-06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 15 V
ID = 40 A
RG =4.7 Ω
VGS = 5 V
(see test circuit, figure 3)
VDD = 24 V ID = 80 A VGS = 5 V
Min.
Typ.
40
260
Max.
55
350
Unit
ns
ns
95 130 nC
30
nC
44
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V ID = 80 A
RG =4.7 Ω VGS = 5 V
(see test circuit, figure 5)
Min.
Typ.
70
165
250
Max.
95
220
340
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 80 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 80 A
di/dt = 100 A/µs
VDD = 15 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
80
320
Unit
A
A
1.5
V
75
ns
0.14
µC
4
A
Safe Operating Area for
Thermal Impedance
3/8
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