IXSH35N120B データシートの表示（PDF） - IXYS CORPORATION
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IXSH35N120B Datasheet PDF : 2 Pages
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Symbol
g
fs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
t
fi
Eoff
t
d(on)
tri
E
on
td(off)
tfi
E
off
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
RG = 5 Ω
VCE = 0.8 VCES
Note 3
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = 5 Ω, VCE = 0.8 VCES
Note 3
(TO-247)
16 23
S
3600
pF
260
pF
75
pF
120
nC
33
nC
49
nC
36
ns
27
ns
160 300 ns
180 300 ns
5
9 mJ
38
ns
29
ns
2.5
mJ
240
ns
340
ns
9
mJ
0.42 K/W
0.25
K/W
IXSH 35N120B
IXST 35N120B
TO-247 AD Outline (IXSH)
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline (IXST)
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG.
Dim. Millimeter
Min. Max.
A
4.9 5.1
A1
2.7 2.9
A2
.02 .25
b 1.15 1.45
b2
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3
0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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