BAV170 データシートの表示（PDF） - Philips Electronics

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BAV170

Low-leakage double diode

Philips Electronics 

Philips Semiconductors

Low-leakage double diode

Product specification

BAV170

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

VRRM

VR

IF

IFRM

IFSM

Ptot

Tstg

Tj

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

total power dissipation

storage temperature

junction temperature

single diode loaded; note 1;

see Fig.2

double diode loaded; note 1;

see Fig.2

square wave; Tj = 25 °C prior to

surge; see Fig.4

tp = 1 µs

tp = 1 ms

tp = 1 s

Tamb = 25 °C; note 1

Note

1. Device mounted on a FR4 printed-circuit board.

MIN. MAX. UNIT

−

85

V

−

75

V

−

215 mA

−

125 mA

−

500 mA

−

4

A

−

1

A

−

0.5

A

−

250 mW

−65

+150 °C

−

150 °C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

TYP. MAX. UNIT

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

−

900

mV

−

1000 mV

−

1100 mV

−

1250 mV

VR = 75 V

0.003 5

nA

VR = 75 V; Tj = 150 °C

3

80

nA

f = 1 MHz; VR = 0; see Fig.6

2

−

pF

when switched from IF = 10 mA to

0.8

3

µs

IR = 10 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

2003 Mar 25

3

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