AT-42070 データシートの表示（PDF） - Avago Technologies

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AT-42070

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Avago Technologies 

AT-42070

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Data Sheet

Description

Features

Avago’s AT-42070 is a general purpose NPN bipolar

transistor that offers excellent high ­frequency performance.

The AT‑42070 is housed in a hermetic, high reliability gold-

ceramic 70 mil microstrip package. The 4 micron emitter-

to-emitter pitch enables this transistor to be used in many

different functions. The 20 emitter finger interdigitated

geometry yields a medium sized transistor with impedances

that are easy to match for low noise and medium power

applications. This device is ­ designed for use in low noise,

wideband amplifier, mixer and oscillator applications in the

VHF, UHF, and microwave frequencies. An optimum noise

match near 50Ω up to 1 GHz, makes this device easy to use

as a low noise amplifier.

• High Output Power:

21.0 dBm Typical P1 dB at 2.0 GHz

20.5 dBm Typical P1 dB at 4.0 GHz

• High Gain at 1 dB Compression:

15.0 dB Typical G1 dB at 2.0 GHz

10.0 dB Typical G1 dB at 4.0 GHz

• Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz

• High Gain-Bandwidth Product: 8.0 GHz Typical fT

• Hermetic Gold-ceramic Microstrip Package

The AT-42070 bipolar transistor is fabricated using Avago’s

10 GHz fT Self-Aligned-Transistor (SAT) ­process. The die is

nitride passivated for surface protection. Excellent device

uniformity, performance and reliability are produced by

the use of ion-implantation, self-alignment techniques,

and gold metalization in the ­fabrication of this device.

70 mil Package

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