MPSA55 データシートの表示（PDF） - WEJ ELECTRONIC CO.

部品番号

コンポーネント説明

一致するリスト

MPSA55

TRANSISTOR (PNP)

WEJ ELECTRONIC CO. 

RoHS

MPSA55

MPSA55 TRANSISTOR (PNP)

D FEATURES

T Power dissipation

.,L PCM:

0.625 W (Tamb=25℃)

Collector current

ICM:

-0.5 A

O Collector-base voltage

V(BR)CBO:

-60

V

C Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Collector-BASE breakdown voltage

O Collector-emitter breakdown voltage

R Emitter-base breakdown voltage

T Collector cut-off current

C Collector cut-off current

E DC current gain

Collector-emitter saturation voltage

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

hFE

VCE(sat)

Test conditions

Ic=-0.1mA, IB=0

Ic=-1 mA, IB=0

IE=-0.1mA, IC=0

VCB=-60 V, IE=0

VCE=-60V, IC=0

VCE=-1V, IC=-100mA

IC=-100 mA, IB=-10mA

MIN

-60

-60

-4

100

TYP

L Base-Emitter Saturation Voltage

WEJ E Transition frequency

VBE

VCE=-1V, IC=-100mA

VCE=-1V, IC=-100mA

fT

50

f=100MHz

MAX UNIT

V

V

V

-0.1

µA

-0.1

µA

-0.25

V

-1.2

V

MHz

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

Share Link: