BF420 データシートの表示（PDF） - New Jersey Semiconductor
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BF420 Datasheet PDF : 2 Pages
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BF420, BF422
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Collector-Base Breakdown Voltage BF420 V(BR)CBO 300
-
atlc = 100jiA, IB = 0
BF422
V(BR)CBO
250
—
Collector-Emitter Breakdown Voltage BF422 V(BR)CEO 250
-
-
atlc = 10mA, IE = 0
Collector-Emitter Breakdown Voltage BF420 V(BR)CER 300
-
-
atRBE = 2.7kQ, lc = 10mA
Emitter-Base Breakdown Voltage
at IE = 100 nA, IB = 0
V(BR)EBO
5
-
-
Collector-Base Cutoff Current
at VCB = 200 V, IE = 0
ICBO
-
-
10
Collector-Emitter Cutoff Current
at RBE = 2.7 kQ, VCe = 250 V
ICER
50
at RBE = 2.7 kii, VCE = 200 V, Tj = 150 °C
ICER
10
Collector Saturation Voltage
at lc = 30 mA, IB = 5 mA
VcEsat
-
-
0.6
DC Current Gain
at VCE = 20 V, lc = 25mA
HFE
50
-
-
Gain-Bandwidth Product
at VCE = 10V, lc = 10mA
fr
60
-
-
Feedback Capacitance
at VCE = 30 V, lc = 0, f = 1 MHz
Cre
-
-
1.6
Thermal Resistance Junction to Ambient Air
RthJA
-
-
1501>
1> Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
V
V
V
V
V
nA
nA
MA
V
-
MHz
PF
K/W
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