NTE2388 データシートの表示（PDF） - NTE Electronics
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NTE2388 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V(BR)DSS ID = 250µA, VGS = 0
200 – – V
Zero–Gate Voltage Drain Current
IDSS VGS = 0, VDS = Max Rating
–
– 200 µA
VGS = 0, VDS = 160V,
TC = +125°C
–
– 1000 µA
Gate–Body Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V
– – 100 nA
Gate–Body Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V
– – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
Static Drain–Source On Resistance
On–State Drain Current
Forward Transconductance
Dynamic Characteristics
VGS(th)
RDS(on)
ID(on)
gfs
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
VGS = 10V, VDS ≥ 3.2V
VDS ≥ 3.2V, ID = 10A
2–4V
–
– 0.18 Ω
18 – – A
6 – – mhos
Input Capactiance
Output Capacitance
Ciss
Coss
VDS = 25V, VGS = 0,
f = 1MHz
Reverse Transfer Capactiance
Crss
Switching Characteristics (Note 1)
– – 1600 pf
– – 750 pf
– – 300 pf
Turn–On Time
Rise Time
td(on)
tr
VDD [ 75V, ID = 10APEAK,
Rg = 4.7Ω
Turn–Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Gate–Source Charge
Qg VDS = 160V, VGS = 10V,
Qgs ID = Rated ID
Gate–Drain Charge
Qgd
Source Drain Diode Characteristics (Note 1)
– – 30 ns
– – 60 ns
– – 80 ns
– – 60 ns
– 38 60 nC
– 16 – nC
– 22 – nC
Forward ON Voltage
Forward Turn–On Time
Reverse Recovery Time
Internal Package Inductance
VSD IS = Rated ID, VGS = 0
ton
trr
– 1.8 2.0 V
Limited by stray inductance
– 450 – ns
Internal Drain Inductance
Ld Measured from the contact – 3.5 – nH
screw on tab to center of die
Measured from the drain lead – 4.5 – nH
0.25” from package to center
of die
Internal Source Inductance
Ls Measured from the source – 7.5 – nH
lead 0.25” from package to
source bond pad
Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
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