1N3880R データシートの表示（PDF） - GeneSiC Semiconductor, Inc.
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1N3880R Datasheet PDF : 3 Pages
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Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 400 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3879 thru 1N3883R
VRRM = 50 V - 400 V
IF = 6 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC ≤ 100 °C
50
100
200
300
400
V
35
70
140
210
280
V
50
100
200
300
400
V
6
6
6
6
6
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
90
90
90
90
90
A
Operating temperature
Tj
Storage temperature
Tstg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
Diode forward voltage
Reverse current
VF
IF = 6 A, Tj = 25 °C
1.4
1.4
1.4
1.4
1.4
V
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
15
3
15
3
15
3
15
15
μA
3
3
mA
Recovery Time
Maximum reverse recovery
time
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
200
200
nS
Thermal characteristics
Thermal resistance, junction
- case
RthJC
2.5
2.5
2.5
2.5
2.5 °C/W
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