NCP1011(2010) データシートの表示（PDF） - ON Semiconductor

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NCP1011
(Rev.:2010)

Self-Supplied Monolithic Switcher for Low Standby Power Offline SMPS

ON Semiconductor 

NCP1010, NCP1011, NCP1012, NCP1013, NCP1014

ELECTRICAL CHARACTERISTICS (For typical values TJ = 25C, for min/max values TJ = --40C to +125C, Max TJ = 150C,

VCC = 8.0 V unless otherwise noted.)

Rating

Pin Symbol Min

Typ

Max Unit

SUPPLY SECTION AND VCC MANAGEMENT

VCC Increasing Level at which the Current Source Turns--off

VCC Decreasing Level at which the Current Source Turns--on

Hysteresis between VCCOFF and VCCON

VCC Decreasing Level at which the Latch--off Phase Ends

VCC Decreasing Level at which the Internal Latch is Released

Internal IC Consumption, MOSFET Switching at 65 kHz (Note 2)

Internal IC Consumption, MOSFET Switching at 100 kHz (Note 2)

Internal IC Consumption, MOSFET Switching at 130 kHz (Note 2)

Internal IC Consumption, Latch--off Phase, VCC = 6.0 V

Active Zener Voltage Positive Offset to VCCOFF

Latch--off Current

NCP1012/13/14

NCP1010/11

0C < TJ < 125C

--40C < TJ < 125C

0C < TJ < 125C

--40C < TJ < 125C

POWER SWITCH CIRCUIT

Power Switch Circuit On--state Resistance

NCP1012/13/14 (Id = 50 mA)

TJ = 25C

TJ = 125C

NCP1010/11 (Id = 50 mA)

TJ = 25C

TJ = 125C

Power Switch Circuit and Startup Breakdown Voltage

(ID(off) = 120 mA, TJ = 25C)

Power Switch and Startup Breakdown Voltage Off--state Leakage Current

TJ = --40C (Vds = 650 V)

TJ = 25C (Vds = 700 V)

TJ = 125C (Vds = 700 V)

Switching Characteristics (RL = 50 Ω, Vds Set for Idrain = 0.7 x Ilim)

Turn--on Time (90%--10%)

Turn--off Time (10%--90%)

1

VCCOFF

7.9

1

VCCON

6.9

1

--

--

1

VCClatch

4.4

1

VCCreset

--

1

ICC1

--

1

ICC1

--

1

ICC1

--

1

ICC2

--

1 Vclamp 140

1

ILatch

6.3

5.8

5.8

5.3

8.5

7.5

1.0

4.7

3.0

0.92

0.95

0.98

290

200

7.4

7.4

7.3

7.3

9.1

V

8.1

V

--

V

5.1

V

--

V

1.1 mA

1.15 mA

1.2 mA

--

mA

300 mV

mA

9.2

9.2

9.0

9.0

5

RDSon

--

11

19

22

38

5

BVdss

700

--

Ω

16

24

35

50

--

V

IDS(OFF)

5

--

5

--

5

--

5

ton

--

5

toff

--

mA

70

120

50

--

30

--

ns

20

--

10

--

INTERNAL STARTUP CURRENT SOURCE

High--voltage Current Source, VCC = 8.0 V

NCP1012/13/14

0C < TJ < 125C

--40C < TJ < 125C

NCP1010/11

0C < TJ < 125C

--40C < TJ < 125C

High--voltage Current Source, VCC = 0

CURRENT COMPARATOR TJ = 25C (Note 2)

Maximum Internal Current Setpoint, NCP1010 (Note 3)

Maximum Internal Current Setpoint, NCP1011 (Note 3)

Maximum Internal Current Setpoint, NCP1012 (Note 3)

Maximum Internal Current Setpoint, NCP1013 (Note 3)

Maximum Internal Current Setpoint, NCP1014 (Note 3)

Default Internal Current Setpoint for Skip--Cycle Operation, Percentage of

Max Ip

1

IC1

1

IC2

mA

5.0

8.0

10

5.0

8.0

11

5.0

8.0

10.3

5.0

8.0

11.5

--

10

--

mA

5 Ipeak (22) 90

100

110 mA

5 Ipeak (22) 225

250

275 mA

5 Ipeak (11) 225

250

275 mA

5 Ipeak (11) 315

350

385 mA

5 Ipeak (11) 405

450

495 mA

--

ILskip

--

25

--

%

Propagation Delay from Current Detection to Drain OFF State

Leading Edge Blanking Duration

2. See characterization curves for temperature evolution.

3. Adjust di/dt to reach Ipeak in 3.2 msec.

--

TDEL

--

TLEB

--

125

--

ns

--

250

--

ns

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