MJE13070 データシートの表示（PDF） - Inchange Semiconductor

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MJE13070

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 400V(Min)- MJE13070

= 450V(Min)- MJE13071

· Collector-Emitter Saturation Voltage-

: VCE(sat) = 3.0V(Min)@IC= 5A

APPLICATIONS

·Designed for high-voltage, high-speed, power switching in

inductive circuits, where fall time is critical.They are partic-

ularly suited for line-operated switchmode applications su-

ch as switching regulators , inverters , DC-DC converter,

motor controls, solenoid drive and deflection circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter

Voltage

MJE13070

650

V

MJE13071

750

VCEO

Collector-Emitter

Voltage

MJE13070

400

V

MJE13071

450

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

8

A

IBB

Base Current

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

2

A

80

W

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

1.56 ℃/W

isc Product Specification

MJE13070/13071

isc Website：www.iscsemi.cn

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