KSC2330 データシートの表示（PDF） - WEJ ELECTRONIC CO.

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KSC2330

TRANSISTOR (NPN)

WEJ ELECTRONIC CO. 

RoHS

KSC2330

WEJ ELECTRONIC CO.,LTD KSC2330 TRANSISTOR(NPN)

FEATURE

Power dissipation

PCM:

1

W (Tamb=25℃)

Collector current

ICM:

0.1

A

Collector-base voltage

V(BR)CBO: 300

V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92L

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE

VCE(sat)

Test conditions

Ic= 100µA, IE=0

IC= 5mA, IB=0

IE= 100µA, IC=0

VCB=200V, IE=0

VCE=10 V, IC= 20mA

IC= 10m A, IB= 1mA

MIN

MAX

300

300

7

0.1

40

240

0.5

Transition frequency

fT

VCE= 30 V, IC= 10mA

50

UNIT

V

V

V

µA

V

MHz

CLASSIFICATION OF hFE

Rank

Range

R

40-80

O

70-140

Y

120-240

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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