IRF420 データシートの表示（PDF） - New Jersey Semiconductor
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IRF420
New Jersey Semiconductor
IRF420 Datasheet PDF : 3 Pages
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IRF420, IRF421, IRF422, IRF423
Absolute Maximum Ratings Tc =25°c Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1)
• .Vnq
Drain to Gate Voltage (Res = 20k£2) (Note 1 ) . . . .• • • VDGR
Continuous Drain Current. . .
ln
Tr = 1 00°C
In
Pulsed Drain Current (Note 3) . .
IRF420
500
500
2.5
1.6
10
Gate to Source Voltage . . . .
Maximum Power Dissipation
Linear Derating Factor
. . -Vfic
±20
. . .Pn
50
0.4
Single Pulse Avalanche Energy Rating (Note 4) . .
EAS
Operating and Storage Temperature
•Tj, TSTG
Maximum Temperature for Soldering
Leads at 0 063in (1 6mm) from Case for 10s ...
TL
Packaae Bodv for 10s, See TB334
. . . . Tntn
210
-55 to 150
300
260
IRF421
450
450
2.5
1.6
10
±20
50
0.4
210
-55 to 150
300
260
IRF422
500
500
2.2
1.4
8
±20
50
0.4
210
-5510150
300
260
IRF423
450
450
2.2
1.4
8
±20
50
0.4
210
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/°C
mj
°C
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto125°C.
Electrical Specifications Tc = 25°C, Unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF420, IRF422
BVDSS ID = 250uA, VGS = OV, (Figure 10)
500
_
_
V
IRF421.IRF423
450 -
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH) VGS = VDS,lD = 250nA
!DSS
VDS = Rated BVDSS, VGS = OV
VDS = 0.8 x Rated BVDSS, VGS = OV,
Tj = 125°C
2.0
-
4.0
V
-
-
25
UA
-
-
250
uA
On-State Drain Current (Note 2)
IRF420, IRF421
'D(ON) VDS =" to(ON) x rDS(ON)MAX> VGS = 1OV
(Figure 7)
2.5
_
,
A
IRF422, IRF423
2.2
-
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF420, IRF421
!GSS
rDS(ON)
VGS = ±2°V
ID = 1-4A, VGS = 10V, (Figures 8, 9)
-
±100 nA
_
2.5 3.0
Q
IRF422, IRF423
3.0 4.0
Q
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
9fS
VDS * 10V, ID = 2-OA. (Figure 12)
1.5 2.3
-
S
'd(ON) VDD = 250V, ID = 2.5A, RG = 18Q, R|_ = 96£J.
-
10 15
ns
tr
Times are Essentially Independent of Operating
-
12 18
ns
Temperature
'd(OFF)
-
28 42
ns
tf
-
12 18
ns
Qg(TOT) VGS = 10V, ID <= 2.5A, VDS = 0-8 x Rated BVDSs, -
11 19
nC
IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate to Source Charge
Gate to Drain "Miller" Charge
Qgs Operating Temperature
Qgd
-
5
-
nC
-
6
-
nC
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