MTP60N05 データシートの表示（PDF） - Motorola => Freescale

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MTP60N05

HDTMOS E-FET power field effect transistor

Motorola => Freescale 

MTP60N05HDL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

50

—

Zero Gate Voltage Drain Current

(VDS = 50 Vdc, VGS = 0 Vdc)

(VDS = 50 Vdc, VGS = 0 Vdc, TJ = –25°C)

IDSS

—

—

Gate–Body Leakage Current

(VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

—

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

Static Drain–to–Source On–Resistance

(VGS = 5.0 Vdc, ID = 30 Adc)

RDS(on)

—

Drain–to–Source On–Voltage (VGS = 5.0 Vdc)

(ID = 60 Adc)

(ID = 30 Adc, TJ = 125°C)

Forward Transconductance

(VDS = 4.0 Vdc, ID = 20 Adc)

VDS(on)

—

—

gFS

15

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS (2)

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(VDD = 25 Vdc, ID = 60 Adc,

VGS = 5.0 Vdc, RG = 9.1 Ω)

W (VDD = 25 Vdc, ID = 60 Adc,

VGS = 5.0 Vdc, RG = 9.1 )

td(on)

—

tr

—

td(off)

—

tf

—

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

VSD

(IS = 60 Adc, VGS = 0 Vdc)

—

(IS = 60 Adc, VGS = 0 Vdc, TJ = 125°C)

—

Reverse Recovery Time

trr

—

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

55

—

mV/°C

µAdc

—

10

—

100

nAdc

—

100

1.5

4.5

0.010

—

—

48

2.0

—

0.014

1.0

0.75

—

Vdc

mV/°C

Ohms

Vdc

mhos

2775

4000

pF

750

1070

150

300

21

40

ns

570

1150

86

170

200

400

42

62

nC

8.0

—

24

—

17

—

Vdc

0.95

1.1

0.85

—

50

—

ns

34

—

15

—

0.085

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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