P4C164LL-90P6C データシートの表示（PDF） - Semiconductor Corporation
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P4C164LL-90P6C Datasheet PDF : 10 Pages
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AC CHARACTERISTICS—WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol Parameter
-80
Min Max
tWC
Write Cycle Time
80
tCW
Chip Enable Time to End of Write
70
tAW
Address Valid to End of Write
70
tAS
Address Setup Time
0
tWP
Write Pulse Width
60
tAH
Address Hold Time
0
tDW
Data Valid to End of Write
40
tDH
Data Hold Time
tWZ
Write Enable to Output in High Z
tOW
Output Active from End of Write
0
30
10
P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM
-90
Min Max
90
80
80
0
60
0
40
0
30
10
-100
Min Max
100
80
80
0
60
0
40
0
30
10
-120
Unit
Min Max
120
ns
100
ns
100
ns
0
ns
60
ns
0
ns
40
ns
0
ns
30
ns
10
ns
TIMING WAVEFORM OF WRITE Cycle No. 1 (WE Controlled)(6)
Notes:
11.
12.
13.
COIfECE1Eias1ngLdoOeWWs EHfoImGr uHths,itsobrWeCRLEOI2TgWEo,ecasyncLdlOeCWtoE,2sshHimoIGwulHttaWnfZoearonWudsRtlyOITWw.EithcyWclEe.HIGH,
the output remains in a high impedance state
14. Write Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM116 REV 04
Page 5
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