MS5D3031 データシートの表示（PDF） - Fuji Electric

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MS5D3031

SILICON DIODE

Fuji Electric 

1. SCOPE

This specification provides the ratings and the test requirement for FUJI SILICON DIODE

PG905C4RR

2. OUT VIEW , MARKING , MOLDING RESIN , CHARACTERISTICS

(1) Out view is shown

MS5D3031 9/12

(2) Marking is shown

MS5D3031 9/12

It is marked to type name or abbreviated type name, polarity and Lot No.

(3) Molding resin

Epoxy resin

UL:V-0

(4) Characteristics is shown

MS5D3031 10/12～12/12

Bar Code Label of EIAJ C-3 Specification.

(1) Type Name

(2) Production Code

(3) Quantity

(4) Lot №(Date code)

(5) Company Code

Indispensable description items are shown as below.

3. RATINGS

3.1 MAXIMUM RATINGS

ITEM

(at Ta=25℃ unless otherwise specified.)

SYMBOL

CONDITIONS

RATINGS UNITS

Repetitive peak reverse voltage

VRRM

400

V

Isolating voltage

Average output current

Non-repetitive forward surge current**

Viso Terminals-to-Case,AC.1min

Io

50Hz Square wave duty =1/2

Tc = 93℃

IFSM Sine wave, 10ms 1shot

1500

20*

70

Operating junction temperature

Tj

150

Storage temperature

Tstg

-40～+150

* Out put current of center tap full wave connection.

**Rating per element

3.2 ELECTRICAL (at Ta=25℃ unless otherwise specified.)

ITEM

SYMBOL

CONDITIONS

MAXIMUM

Forward voltage ***

VF

IF = 10 A

1.5

Reverse current ***

IR

VR = VRRM

500

Reverse recovery time***

trr

IF=0.1A,IR=0.2A,Irec=0.05A

0.05

Thermal resistance

Rth(j-c) Junction to case

2.0

*** Rating per element

3.3 MECHANICAL CHARACTERISTICS

Mounting torque

Recommended torque

Approximate mass

0.4～0.6

6

V

A

A

℃

℃

UNITS

V

μA

μs

℃/W

N･m

g

Fuji Electric Device Technology Co.,Ltd.

MS5D3031 3/12

H04-004-03a

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