BAP50-04W データシートの表示（PDF） - NXP Semiconductors.
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BAP50-04W Datasheet PDF : 8 Pages
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Philips Semiconductors
General purpose PIN diode
Product specification
BAP50-04W
GRAPHICAL DATA
103
handbook, halfpage
rD
(Ω)
102
MLD522
10
1
10−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
handboo5k,0h0alfpage
Cd
(fF)
400
MLD523
300
200
100
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
handbook, h0alfpage
s21 2
(1)
(dB)
−1
(2)
−2
(3)
−3
MLD524
−4
−5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA.
(3) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4 Insertion loss (|s21|2) of the diode in on-state
as a function of frequency; typical values.
handbook, h0alfpage
s21 2
(dB)
−5
MLD525
−10
−15
−20
−25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Fig.5 Isolation (|s21|2) of the diode in off-state as a
function of frequency; typical values.
2001 Jan 29
4
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