IRLR3303PBF データシートの表示（PDF） - International Rectifier
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IRLR3303PBF Datasheet PDF : 10 Pages
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IRLR/U3303PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
––– 0.031
––– 0.045
Ω
VGS = 10V, ID = 21A
VGS = 4.5V, ID = 17A
1.0 ––– ––– V VDS = VGS, ID = 250µA
12 ––– ––– S VDS = 25V, ID = 20A
––– ––– 25
––– ––– 250
µA VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 26
ID = 20A
––– ––– 8.8 nC VDS = 24V
––– ––– 15
VGS = 4.5V, See Fig. 6 and 13
––– 7.4 –––
VDD = 15V
––– 200 –––
––– 14 –––
ns ID = 20A
RG = 6.5Ω, VGS = 4.5V
––– 36 –––
RD = 0.70Ω, See Fig. 10
Between lead,
D
––– 4.5 ––– nH 6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 870 –––
––– 340 –––
––– 170 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 35
A
showing the
integral reverse
G
––– ––– 140
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 20A, VGS = 0V
––– 72 110 ns TJ = 25°C, IF = 20A
––– 180 280 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L =470µH
RG = 25Ω, IAS = 20A. (See Figure 12)
ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRL3303 data and test conditions.
www.irf.com
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