LAG640D データシートの表示（PDF） - Mitsumi

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LAG640D

IC for Multifunction Telephones

Mitsumi 

MITSUMI

IC for Multifunction Telephones LAG640

Notes on Use

1. Protection from high-frequency noise

In consideration of applications in which telephone sets are connected over long distances, this IC is

designed for high withstand and static breakdown voltages at pins 3 and 4, which are in danger of being

exposed to electrostatic charge and high-frequency noise.

Pins 3 and 4

Other pins

DC withstand voltage

46V or higher

Static breakdown voltage ±1000V or higher

(human body buildup method, 200pF, 0Ω)

DC withstand voltage

15V or higher

Static breakdown voltage ±300V or higher

(human body buildup method, 200pF, 0Ω)

However, the IC may be damaged by adverse mounting or use conditions, and so it is recommended that a

surge suppressor be inserted between pin 4 and GND.

2. Protection from surge currents

A diode for capacitor charging is connected between data transmission output pins 26 and 27 as shown

below; the surge current ratings shown below should not be exceeded.

If these ratings are to be exceeded, it is recommended that a resistance R for surge current limiting or a

diode Dt for absorption be inserted.

Internal diode maximum ratings

Io

IF (peak)

IF (surge)

100mA

500mA

700mA

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